2 edition of Growth and characterization of materials for infrared detectors and nonlinear optical switches found in the catalog.
Growth and characterization of materials for infrared detectors and nonlinear optical switches
Includes bibliographical references and index.
|Statement||Randolph E. Longshore, Jan W. Baars, chairs/editors ; sponsored and published by SPIE--the International Society for Optical Engineering ; cooperating organization, CREOL/University of Central Florida.|
|Series||Proceedings / SPIE--the International Society for Optical Engineering ;, v. 1484, Proceedings of SPIE--the International Society for Optical Engineering ;, v. 1484.|
|Contributions||Longshore, Randolph E., Baars, Jan W., Society of Photo-optical Instrumentation Engineers., CREOL (Research center)|
|LC Classifications||TA1570 .G76 1991|
|The Physical Object|
|Pagination||vi, 168 p. :|
|Number of Pages||168|
|LC Control Number||91065637|
The book also covers switching based on optical nonlinear effects, liquid and photonic crystal optical switches as well as fibre, holographic, quantum optical and other types of optical switches. Each chapter discusses the choice of materials, fabrication techniques and key issues in switch design. Nanostructures are of considerable interest for all optical systems because of their potential of very fast recovery and enhanced nonlinear optical properties. Organic materials offer the flexibilty in the design and the ease of synthesis. The study of semiconductor materials for nonlinear optics has matured to include low dimensional structures.
Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials . Infrared Detectors Nonlinear Optical Switches, , () Google Scholar K.P. Ghatak, SPIE, Fiber Optic Laser Sensors IX, , () Google Scholar.
[More About This Book] "Novel InTlSb Infrared Detectors" chapter 8 in Long Wavelength Infrared Detectors M. Razeghi, Editor, Gordon and Breach Publishers, Inc., published [More About This Book] "Growth and Characterization of GaInP/GaAs System for Quantum Well Infrared Photodetector Applications" chapter 2 in. A noncontact, noninvasive lifetime characterization technique for measuring the excess carrier lifetime in long wavelength infrared (LWIR) Hg(1-x)Cd(x)Te (x equals to about ) using transient millimeter-wave (90 GHz) reflectance is presented. Excess carrier lifetime results for both p-type (vacancy-doped greater than about 10 exp 16/cu cm) and n-type (annealed Cited by: 4.
Applications of discrete functional analysis to the finite difference method
Investigation of axial positioning for flexural compressors
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Mercury cadmium telluride (MCT) is the third most well-regarded semiconductor after silicon and gallium arsenide and is the material of choice for use in infrared sensing and imaging. The reason for this is that MCT can be ‘tuned’ to the desired IR wavelength by varying the cadmium concentration.
Mercury Cadmium Telluride: Growth, Properties and Applications provides. Other papers are on structural and optical properties of melt-processed calcium aluminate fibers, the preparation and characterization of a new thermistor material for thermistor bolometer, and photoemission from quantum-confined structure of nonlinear optical materials.
Bridgman-S1ockbarger Crystal Growth of II-VI Compounds, Invited Paper," SPIE's Symposium o/_ Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches, Orlando, FL, AprilGokoglu, S.
A., Arnold, W. A., Tsui, P., and Chait, A., "A 2D Analysis for Convection Effects in a CVD. Characterization of New Infrared Nonlinear Optical Material with High Laser Damage Threshold, Li2Ga2GeS6 Abstract A new thio-germanium sulfide Li2Ga2GeS6 has been synthesized for the first time and its structure was found to be isomorphous with AgGaGeS4, which is well-known as a promising infrared NLO material.
The host. Introduction. Much evolution has been made in the new materials with high optical nonlinearities because their practical applications in harmonic generation, amplitude and phase modulation, laser technology, switching and other signal processing devices [1,2].Nonlinear optical (NLO) materials have attracted many researchers due to their huge range of.
Rene' Granger "Infrared reflectivity: a tool for bond investigation in II-VI ternaries", Proc. SPIEGrowth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches, (1 August ); https: Author: Rene' Granger. Techniques for nonlinear optical characterization of materials: a review Since there is a large interest in developing new materials for applications such as optical limiting, all-optical switch-ing, and signal processing, a large number of NL techniques Bloembergen in his milestone Nonlinear Optics book , Cited by: Figure 1 shows the ratio of D* at spectral peak to D* for a °K blackbody as a function of long-wavelength threshold (or wavelength for detector peak response).6 In order to present more specific information about detectors, the mechanism responsible for the detector action must be considered.
` H. Levinstein, in "Applied Optics and Optical Author: Henry Levinstein. There is a considerable increase in effective lifetime values and in photoluminescence intensities. In addition, significant differences between the voltametric analysis curves of HgZnTe and HgCdTe were observed.
The results are discussed in view of the bonding characteristics of the two by: 3. Ion implantation in HgCdTe is a well-established approach for fabricating IR- sensitive photovoltaic devices with n-on-p type junctions.
The technique typically uses ion implantation of light species (usually B) to form the n region by the diffusion of irradiation-induced defects, including Hg atoms, in the material doped by Hg-vacancy by: 2.
The dopants increase the hardness value of the material, which also depends on the concentration of the dopants. Dye doping improves the Nonlinear Optical properties of the grown crystals.
Results of the growth kinetics of Potassium Dihydrogen Phosphate crystals in the presence of impurities are also discussed. Growth of new semi organic nonlinear optical material Bis Thiourea Lithium Potassium Sulphate (BTLKS) single crystals have been grown at 40 °C temperature by slow evaporation method.
Growth and characterization of materials for infrared detectors and nonlinear optical switches: AprilOrlando, Florida. A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the s and s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in The SiC SBD market.
The analysis of the growth rate and XPS measurements indicate that the films are composed of a mixture of Cd, Hg and Te fluorides, together with unreacted HgTe and elemental Te.
The films are characterized by some of their optical, electrical and chemical by: 1. A modified Bridgman-Stockbarger crystal growth system has been designed and fabricated by relatively low-temperature (up to degrees C) nonlinear optical organic materials.
The successful MBE growth of CdMnTe-CdTe heterostructures and superlattices has demonstrated the feasibility of growing layered structures incorporating dilute magnetic semiconductor materials (DMS).
These materials exhibit new and interesting by: 2. Instrumentation for Characterization and Spectroscopy of Nonlinear Optical Materials Paperback – January 1, by Robert W. Boyd (Author) See all formats and editions Hide other formats and editions.
Price New from Used from Paperback Author: Robert W. Boyd. challenges and several future directions of the cavity nonlinear optics with these emerging layered material systems.
Table 1: Reported nonlinear optical coefficients in layered materials: SI unit for 1(3)-coefficients is ;2/(2 and for 1(2)-coefficients is ;/.
Bulk crystal growth and characterization of semiorganic nonlinear optical materials. High quality bulk single crystals of novel NLO semiorganics: L-arginine tetrafluoroborate (L-AFB) and L-histidine tetrafluoroborate (L-HFB) measuring 78 × 50 × 35 mm 3 have been successfully grown from solution by temperature lowering methods.
The compound has a melting point of 93 °C. it is a single crystal of non-hygroscopic, noncentrosymmetry crystalline organic compound of the space group Pca2 1 having molecular formula C 8 H 9 NO 2, which finds a key application in second- and third-order non-linear optics that include harmonic generation, optical switches, photonic devices Cited by: 4.Key Topics Crystal growth and characterization fundamentals Bulk crystal growth from the melt, solution, and vapor Thin-film epitaxial growth Modeling of growth processes Defect formation and morphology Crystalline material characterization and analysis Features Covers basic concepts, materials, properties, and fabrication.
Contains over 1,Sections address various aspects of optical properties and recommend models of properties of materials of interest for the fabrication of the uncooled microbolometers. In addition, the book presents two case studies, Honeywell and Texas Instruments, that focus on the design and manufacture of microbolometers.